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www.vishay.com For technical questions within your region, please contact one of the following: Document Number: 89184
2
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
Revision: 09-Feb-10
V60200PGW
Vishay General Semiconductor
New Product
Notes
(1)
Pulse test: 300 μs pulse width, 1 % duty cycle
(2)
Pulse test: Pulse width ≤
40 ms
RATINGS AND CHARACTERISTICS CURVES
(TA
= 25
°C unless otherwise noted)
Fig. 1 - Forward Current Derating Curve Fig. 2 - Forward Power Loss Characteristics Per Diode
ELECTRICAL CHARACTERISTICS (TA
= 25 °C unless otherwise noted)
PARAMETER TEST CONDITIONS SYMBOL TYP. MAX. UNIT
Breakdown voltage IR
= 1.0 mA T
A
= 25 °C V
BR
200 (minimum) - V
Instantaneous forward voltage per diode
IF
= 10 A
= 15 A 0.90 -
TA
= 25 °C
VF
(1)
0.69 -
V
IF
IF
= 30 A 1.28 1.48
IF
= 10 A
= 15 A 0.66 -
TA
= 125 °C
0.54 -
IF
IF
= 30 A 0.77 0.85
Reverse current
per diode
VR
= 180 V
TA
= 25 °C
IR
(2)
= 25 °C - 210 μA
3.4 - μA
TA
= 125 °C 4.6 - mA
VR
= 200 V
TA
TA
= 125 °C 7.5 27 mA
THERMAL CHARACTERISTICS (TA
= 25 °C unless otherwise noted)
PARAMETER SYMBOL V60200PGW UNIT
Typical thermal resistance
per diode
R
per device 0.8θJC
1.5
°C/W
ORDERING INFORMATION (Example)
PACKAGE PREFERRED P/N UNIT WEIGHT (g) PACKAGE CODE BASE QUANTITY DELIVERY MODE
TO-3PW V60200PGW-M3/4W 4.5 4W 30/tube Tube
50
60
40
30
20
10
0
02550 75 100
125 150
Case Temperature (°C)
Average Forwar
d Current (A)
Resistive or Inductive Load
70
Mounted on Specifc Heatsink
D = 0.1
D = 0.2
D = 0.3
D = 0.5
D = 0.8
D = 1.0
0
0
4
12
16
20
32
4 8 12 16 20 28 3624 32
Average Forward Current (A)
Average Power Lo
ss
(W)
8
24
28
D = tp/T tp
T
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